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MICROREACTORS, SILICON CARBIDE

MICROREACTORS OF EKasic® SILICON CARBIDE (SiC)

Modern synthesis of valuable fine chemicals and pharmaceuticals requires cost-effective production routes with high yield, improved selectivity and extreme reliability. ESK helps you to meet these complex requirements with EKasic® silicon carbide microreactors.

Applications and Advantages

For example, ESK offers monolithic microreactors made of its own EKasic® silicon carbide (SiC). These EKasic® microreactors seem to have been forged from a single block and are suitable for extreme applications in process engineering, especially for corrosive and thermal processes.

Their Particular Advantages are:

  • Hermetically sealed
  • Universally corrosion resistant
  • Resistant to extreme temperatures

ESK engineers manufacture the equipment individually to your specifications – robustly and pressure resistant, with several functions in one. Find out more!

 

 

Technical data of EKasic® Silicon Carbide:

fileadmin/esk/plain/ekasic-e.html

Silicon Carbide
Material properties Norm Symbol/Unit EKasic®
F		 EKasic®
F plus		 EKasic®
C
Density DIN EN 623-2 ρ [g/cm3] >3.10 >3.16 >3.10
Porosity DIN EN 623-2 P [%] <3.0 <1.0 <3.0
Mean grain size [μm] <5 <5 bimodal
Grain size distribution [μm] 10-1500
Phase composition α-SiC α-SiC α-SiC
Vickers hardness DIN EN 843-4 HV 1 [GPa] 24.5 24.5 24.5
Knoop hardness DIN EN 843-4 HK 0.1 [GPa] 24.5 24.5 24.5
Young's modulus DIN EN 843-2 E [GPa] 430 430 430
Weibull modulus DIN EN 843-5 m 10 10 10
Flexural strength,
4-pt bending		 DIN EN 843-1 σB [MPa] 400 510 400
Compressive strength σD [MPa] > 2500 > 2500 > 2500
Poisson ratio ν 0.17 0.17 0.17
Fracture toughness
(SENB)		 Klc [MPa·m0,5] 4 4 3.5
Coefficient of
thermal expansion		 DIN EN 821-1
20°C - 500°C α [10-6/K] 3.8 3.8 3.8
500°C - 1000°C α [10-6/K] 5.1 5.1 5.1
Specific heat at 20°C DIN EN 821-3 cp [J/g K] 0.69 0.69 0.69
Thermal conductivity
at 20°C		 DIN EN 821-2 λ [W/mK] 130 130 130
Thermal stress
parameters		 calculated
R1 = σB·(1-ν) / (α·E) R1 [K] 203 259 203
R2 = R1·λ R2 [W/mm] 26 34 26
Specific electrical
resistance at 20°C		 DIN EN 50359 ρ [Ω cm] > 108 > 108 104-105



Silicon Carbide
Material properties Norm Symbol/Unit EKasic®
P		 EKasic®
G		 EKasic®
T
Density DIN EN 623-2 ρ [g/cm3] >2.76-
2.89		 >3.02 >3.21
Porosity DIN EN 623-2 P [%] 10-14 <3.0 <1.0
Mean grain size [μm] <5 bimodal <2
Grain size distribution [μm] 10-1000  
Phase composition α-SiC α-SiC,
graphite		 α-SiC,
YAG
Vickers hardness DIN EN 843-4 HV 1 [GPa] 24.5 24.5 22.5
Knoop hardness DIN EN 843-4 HK 0.1 [GPa] 24.0 24.0 22.5
Young's modulus DIN EN 843-2 E [GPa] 340 390 420
Weibull modulus DIN EN 843-5 m 15 15 15
Flexural strength,
4-pt bending		 DIN EN 843-1 σB [MPa] 225 250 550
Compressive strength σD [MPa] > 2000 > 2200 > 2500
Poisson ratio ν 0.13 0.15 0.17
Fracture toughness
(SENB)		 Klc [MPa·m0,5] 3 3.5 6
Coefficient of
thermal expansion		 DIN EN 821-1
20°C - 500°C α [10-6/K] 3.8 3.8 4.1
500°C - 1000°C α [10-6/K] 5.1 5.1 5.3
Specific heat at 20°C DIN EN 821-3 cp [J/g K] 0.69 0.69 0.71
Thermal conductivity
at 20°C		 DIN EN 821-2 λ [W/mK] 110 130 80
Thermal stress
parameters		 calculated
R1 = σB·(1-ν) / (α·E) R1 [K] 152 143 265
R2 = R1·λ R2 [W/mm] 17 19 21
Specific electrical
resistance at 20°C		 DIN EN 50359 ρ [Ω cm] > 108 104-105 103-106