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MICROREACTORS, SILICON CARBIDE

MICROREACTORS OF EKasic® SILICON CARBIDE (SiC)

Modern synthesis of valuable fine chemicals and pharmaceuticals requires cost-effective production routes with high yield, improved selectivity and extreme reliability. ESK helps you to meet these complex requirements with EKasic® silicon carbide microreactors.

Applications and Advantages

For example, ESK offers monolithic microreactors made of its own EKasic® silicon carbide (SiC). These EKasic® microreactors seem to have been forged from a single block and are suitable for extreme applications in process engineering, especially for corrosive and thermal processes.

Their Particular Advantages Are:

 

  • Hermetically sealed
  • Universally corrosion resistant
  • Resistant to extreme temperatures

ESK engineers manufacture the equipment individually to your specifications – robustly and pressure resistant, with several functions in one. Find out more!



Corrosion resistance of EKasic® Silicon Carbide from ESKCorrosion resistance of EKasic® Silicon Carbide from ESK

 

 

Technical data of EKasic® Silicon Carbide:

fileadmin/esk/plain/ekasic-e.html

Silicon Carbide
Material properties Norm Symbol/Unit EKasic®
F		 EKasic®
F plus		 EKasic®
T
Density DIN EN 623-2 ρ [g/cm3] >3.10 >3.16 >3.21
Porosity DIN EN 623-2 P [%] <3.0 <1.0 <1.0
Mean grain size [μm] <5 <5 <2
Grain size distribution [μm]
Phase composition α-SiC α-SiC α-SiC,
YAG
Vickers hardness DIN EN 843-4 HV 1 [GPa] 25.5 25.5 22.5
Knoop hardness DIN EN 843-4 HK 0.1 [GPa] 24.5 24.5 21.0
Young's modulus DIN EN 843-2 E [GPa] 410 420 420
Weibull modulus DIN EN 843-5 m 10 15 15
Flexural strength,
4-pt bending		 DIN EN 843-1 σB [MPa] 400 510 550
Compressive strength σD [MPa] 2200 2200 2500
Poisson ratio ν 0.17 0.17 0.16
Fracture toughness
(SENB)		 Klc [MPa·m0,5] 4 4 6
Coefficient of
thermal expansion		 DIN EN 821-1
20°C - 500°C α [10-6/K] 4.1 4.1 3.5
500°C - 1000°C α [10-6/K] 5.2 5.2 5.2
Specific heat at 20°C DIN EN 821-3 cp [J/g K] 0.6 0.6 0.6
Thermal conductivity
at 20°C		 DIN EN 821-2 λ [W/mK] 125 125 75
Thermal stress
parameters		 calculated
R1 = σB·(1-ν) / (α·E) R1 [K] 198 246 314
R2 = R1·λ R2 [W/mm] 25 31 24
Specific electrical
resistance at 20°C		 DIN EN 50359 ρ [Ω cm] 106-108 106-108 102-103



Silicon Carbide
Material properties Norm Symbol/Unit EKasic®
C		 EKasic®
P		 EKasic®
G
Density DIN EN 623-2 ρ [g/cm3] >3.10 >2.76-
2.89		 >3.02
Porosity DIN EN 623-2 P [%] <3.0 10-14 <3.0
Mean grain size [μm] bimodal <5 bimodal
Grain size distribution [μm] 10-1500 10-1000
Phase composition α-SiC α-SiC α-SiC,
graphite
Vickers hardness DIN EN 843-4 HV 1 [GPa] 25.5 23.5 24.5
Knoop hardness DIN EN 843-4 HK 0.1 [GPa] 24.5 21.6 23.0
Young's modulus DIN EN 843-2 E [GPa] 410 340 390
Weibull modulus DIN EN 843-5 m 10 15 14
Flexural strength,
4-pt bending		 DIN EN 843-1 σB [MPa] 400 225 230
Compressive strength σD [MPa] 2500 2000 2500
Poisson ratio ν 0.17 0.17 0.16
Fracture toughness
(SENB)		 Klc [MPa·m0,5] 3.5 3 3
Coefficient of
thermal expansion		 DIN EN 821-1
20°C - 500°C α [10-6/K] 4.1 3.5 4.0
500°C - 1000°C α [10-6/K] 5.2 5.6 5.0
Specific heat at 20°C DIN EN 821-3 cp [J/g K] 0.6 0.6 0.6
Thermal conductivity
at 20°C		 DIN EN 821-2 λ [W/mK] 125 90 110
Thermal stress
parameters		 calculated
R1 = σB·(1-ν) / (α·E) R1 [K] 198 157 124
R2 = R1·λ R2 [W/mm] 25 14 14
Specific electrical
resistance at 20°C		 DIN EN 50359 ρ [Ω cm] 103-104 106-108 103-104